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| BU2523AX Datasheet, PDF (2/6 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ⤠65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 5.5 A; IB = 1.1 A
IC = 5.5 A; IB = 1.1 A
IC = 1 A; VCE = 5 V
IC = 5.5 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
0.80
-
5
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
1.0 mA
13.5 -
V
-
-
V
-
5.0
V
0.88 0.97 V
14
-
8 10.3
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICsat = 5.5 A; LC = 200 µH; Cfb = 4 nF;
VCC 145 V; IB(end) = 0.56 A;
LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A
TYP. MAX. UNIT
1.5 2.0 µs
0.15 0.3 µs
TRANSISTOR
IC
DIODE
ICsat
t
IB
I B end
t
5 us
6.5 us
16 us
VCE
t
Fig.1. Switching times waveforms.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
Rev 1.100
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