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| BU2522AW Datasheet, PDF (2/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2522AW
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 1 A; VCE = 5 V
IC = 6 A; VCE = 5 V
MIN.
-
-
-
7.5
800
-
-
-
5
TYP. MAX. UNIT
- 0.25 mA
-
2.0 mA
- 0.25 mA
13.5 -
V
-
-
V
-
5.0
V
-
1.3
V
10
-
7
8
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (64 kHz line
deflection circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICsat = 6.0 A; LC = 170 µH;
Cfb = 5.4 nF;
IB(end) = 0.7 A;LB = 0.6 µH;-VBB = 2 V;
(-dIB/dt = 3.33A/µs)
TYP. MAX. UNIT
115
-
pF
1.7 2.0 µs
0.12 0.25 µs
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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