BTA208XB Datasheet, PDF (2/6 Pages) NXP Semiconductors – Three quadrant triacs high commutation

Philips Semiconductors
Three quadrant triacs
high commutation
Product specification
BTA208X series B
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-hs}
Thermal resistance
junction to heatsink
R_{th j-a}
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.5 K/W
-
-
6.5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current²
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D
Off-state leakage current
CONDITIONS
V_D = 12 V; I_T = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
T2+ G+
T2+ G-
T2- G-
V_D = 12 V; I_GT = 0.1 A
I_T = 10 A
V_D = 12 V; I_T = 0.1 A
V_D = 400 V; I_T = 0.1 A; T_j = 125 ˚C
V_D = V_DRM(max); T_j = 125 ˚C
MIN. TYP. MAX. UNIT
2
18 50 mA
2
21 50 mA
2
34 50 mA
-
31 60 mA
-
34 90 mA
-
30 60 mA
-
31 60 mA
-
1.3 1.65 V
-
0.7 1.5 V
0.25 0.4
-
V
-
0.1 0.5 mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dV_D/dt
dI_com/dt
t_gt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
V_DM = 67% V_DRM(max); T_j = 125 ˚C;
exponential waveform; gate open circuit
V_DM = 400 V; T_j = 125 ˚C; I_T(RMS) = 8 A;
without snubber; gate open circuit
I_TM = 12 A; V_D = V_DRM(max); I_G = 0.1 A;
dI_G/dt = 5 A/µs
MIN. TYP. MAX. UNIT
1000 4000 - V/µs
-
14
- A/ms
-
2
-
µs
2 Device does not trigger in the T2-, G+ quadrant.
September 1997
2
Rev 1.200