BT148W Datasheet, PDF (2/7 Pages) NXP Semiconductors – Thyristors logic level

Philips Semiconductors
Thyristors
logic level
Product specification
BT148W series
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-sp}
R_{th j-a}
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
pcb mounted, minimum footprint
pcb mounted, pad area as in fig:14
MIN. TYP. MAX. UNIT
-
-
15 K/W
- 156 - K/W
-
70
- K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
I_GT
Gate trigger current
I_L
Latching current
I_H
Holding current
V_T
On-state voltage
V_GT
Gate trigger voltage
I_D, I_R
Off-state leakage current
CONDITIONS
V_D = 12 V; I_T = 0.1 A
V_D = 12 V; I_GT = 0.1 A
V_D = 12 V; I_GT = 0.1 A
I_T = 2 A
V_D = 12 V; I_T = 0.1 A
V_R = V_RRM(max); I_T = 0.1 A; T_j = 110 ˚C
V_D = V_DRM(max); V_R = V_RRM(max); T_j = 125 ˚C
MIN.
-
-
-
-
-
0.1
-
TYP.
50
0.17
0.10
1.3
0.4
0.2
0.1
MAX.
200
10
6
1.5
1.5
-
0.5
UNIT
µA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
dV_D/dt
t_gt
t_q
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
V_DM = 67% V_DRM(max); T_j = 125 ˚C;
exponential waveform; R_GK = 100 Ω
I_TM = 4 A; V_D = V_DRM(max); I_G = 5 mA;
dI_G/dt = 0.2 A/µs
V_D = 67% V_DRM(max); T_j = 125 ˚C; I_TM = 2 A;
V_R = 35 V; dI_TM/dt = 30 A/µs;
dV_D/dt = 2 V/µs; R_GK = 1 kΩ
MIN.
-
-
-
TYP.
50
2
100
MAX. UNIT
- V/µs
-
µs
-
µs
October 1997
2
Rev 1.300