BSW66A Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN switching transistors

Philips Semiconductors
NPN switching transistors
Product specification
BSW66A; BSW67A; BSW68A
FEATURES
• High current (max. 1 A)
• High voltage (max. 150 V).
APPLICATIONS
• General purpose switching and amplification
• Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpag1e
2
3
3
2
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BSW66A
BSW67A
BSW68A
V_CEO
collector-emitter voltage
BSW66A
BSW67A
BSW68A
I_C
collector current (DC)
P_tot
total power dissipation
h_FE
DC current gain
f_T
transition frequency
t_off
turn-off time
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
100 V
−
−
120 V
−
−
150 V
−
−
−
−
T_case ≤ 25 °C
−
I_C = 10 mA; V_CE = 5 V
30
I_C = 500 mA; V_CE = 5 V
30
I_C = 100 mA; V_CE = 20 V; f = 100 MHz
−
I_Con = 500 mA; I_Bon = 50 mA; I_Boff = −50 mA −
−
100 V
−
120 V
−
150 V
−
1
A
−
5
W
−
−
−
−
130 −
MHz
900 −
ns
1997 May 05
2