BSP107 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

Philips Semiconductors
N-channel enhancement mode vertical
D-MOS transistor
Product specification
BSP107
FEATURES
• Direct interface to C-MOS, TTL,
etc. due to low threshold voltage
• High-speed switching
• No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope.
Intended for use as a line current
interruptor in telephone sets and for
applications in relay, high-speed and
line transformer driver switching.
PINNING - SOT223
PIN
DESCRIPTION
1 gate
2 drain
3 source
4 drain
QUICK REFERENCE DATA
SYMBOL
V_DS
V_GS(th)
I_D
R_DS(on)
PARAMETER
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
MAX.
200
2.4
200
28
handbook, halfpage
4
d
g
1
2
3
s
Top view
MAM054
Fig.1 Simplified outline and symbol.
UNIT
V
V
mA
Ω
April 1995
2