BLW86 Datasheet, PDF (2/15 Pages) NXP Semiconductors – HF/VHF power transistor

Philips Semiconductors
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
h_FE groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
Product specification
BLW86
QUICK REFERENCE DATA
R.F. performance up to T_h = 25 °C
MODE OF
OPERATION
V_CE
f
V
MHz
c.w. (class-B)
s.s.b. (class-AB)
s.s.b. (class-A)
28
175
28 1,6 − 28
26 1,6 − 28
P_L
W
45
5−47,5 (P.E.P.)
17 (P.E.P.)
G_p
dB
> 7,5
typ. 19
typ. 22
η
%
> 70
typ. 45
−
z_i
Y_L
Ω
mS
0,7 + j1,3 110 − j62
−
−
−
−
d₃
dB
−
typ. −30
typ. −42
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
c
b
MBB012
e
3
MSB057
Fig.1 Simplified outline and symbol.
PINNING - SOT123
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2