BLF6G15L-40BRN_15 Datasheet, PDF (2/11 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF6G15L-40BRN
Power LDMOS transistor
1.3 Applications
„ RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
4, 5
6, 7
Pinning
Description
drain
gate
source
sense drain
sense gate
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
4
5
1
[1]
1 4, 5
2
6, 7
3
3 sym126
2
6
7
Table 3. Ordering information
Type number
Package
Name Description
BLF6G15L-40BRN -
flanged ceramic package; 2 mounting holes; 6 leads
Version
SOT1112A
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_GS
V_GS(sense)
I_D
T_stg
T_j
drain-source voltage
gate-source voltage
sense gate-source voltage
drain current
storage temperature
junction temperature
Min Max Unit
-
65 V
−0.5 +11 V
−0.5 +9 V
-
11
A
−65 +150 °C
-
200 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
R_th(j-case) thermal resistance from junction to case T_case = 80 °C; P_L = 2.5 W (CW)
Typ Unit
1.6 K/W
BLF6G15L-40BRN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 November 2010
© NXP B.V. 2010. All rights reserved.
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