BLF244 Datasheet, PDF (2/12 Pages) NXP Semiconductors – VHF power MOS transistor

Philips Semiconductors
VHF power MOS transistor
Product specification
BLF244
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
4-lead SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Matched gate-source voltage (V_GS)
groups are available on request.
PINNING - SOT123
PIN
DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
k, halfpage
1
2
4
3
MSB057
d
g
MBB072 s
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T_h = 25 °C in a common source test circuit.
MODE OF OPERATION
f
V_DS
P_L
G_p
(MHz)
(V)
(W)
(dB)
CW, class-B
175
28
15
> 13
η_D
(%)
> 50
September 1992
2