BGD702MI Datasheet, PDF (2/12 Pages) NXP Semiconductors – CATV amplifier module

Philips Semiconductors
CATV amplifier module
Product specification
BGD702MI
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability
• Mirrored image pinning of the BGD702.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
output
2
common
3
common
5
+V_B
7
common
8
common
9
input
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G_p
PARAMETER
power gain
I_tot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
V_B = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_i
T_stg
T_mb
PARAMETER
RF input voltage
storage temperature
operating mounting base temperature
MIN.
18
18.5
−
MAX.
19
−
435
UNIT
dB
dB
mA
MIN.
−
−40
−20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
1998 Mar 13
2