|
BFU725FN1-115 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package | |||
|
◁ |
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
fT
transition frequency
IC = 25 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
Gp(max) maximum power gain
NF
noise ï¬gure
IC = 25 mA; VCE = 2 V;
f = 5.8 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 2 V;
f = 5.8 GHz; ÎS = Îopt;
Tamb = 25 °C
Min Typ
- 70
- 55
[2] -
18
- 0.7
Max
-
-
-
-
Unit
fF
GHz
dB
dB
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simpliï¬ed outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU725F/N1 -
plastic surface-mounted ï¬at pack package; reverse
pinning; 4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
BFU725F/N1
Marking
B7*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
BFU725F_N1_1
Product data sheet
Rev. 01 â 13 July 2009
© NXP B.V. 2009. All rights reserved.
2 of 11
|
▷ |