BFT93_CNV_15 Datasheet, PDF (2/10 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

NXP Semiconductors
PNP 5 GHz wideband transistor
Product specification
BFT93
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
PINNING
PIN
DESCRIPTION
Code: X1p
1 base
2 emitter
3 collector
lfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_c
P_tot
f_T
C_re
G_UM
F
V_o
collector-base voltage
open emitter
collector-emitter voltage
open base
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
output voltage
up to T_s = 95 C; note 1
I_C = 30 mA; V_CE = 5 V; f = 500 MHz;
T_j = 25 C
I_C = 2 mA; V_CE = 5 V; f = 1 MHz
I_C = 30 mA; V_CE = 5 V; f = 500 MHz;
T_amb = 25 C
I_C = 10 mA; V_CE = 5 V; f = 500 MHz;
T_amb = 25 C
d_im = 60 dB; I_C = 30 mA;
V_CE = 5 V; R_L = 75 ;
f_{(pqr)} = 493.25 MHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
TYP.




5
MAX. UNIT
15 V
12 V
35 mA
300 mW

GHz
1

pF
16.5 
dB
2.4 
dB
300 
mV
November 1992
2