BFR540 Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
FEATURES
• High power gain
The transistor is encapsulated in a
plastic SOT23 envelope.
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
PINNING
fpage
PIN
DESCRIPTION
Code: N29
DESCRIPTION
1 base
2 emitter
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
3 collector
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CES
I_C
P_tot
h_FE
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
S₂₁²
F
insertion power gain
noise figure
open emitter
R_BE = 0
up to T_s = 70 °C; note 1
I_C = 40 mA; V_CE = 8 V
I_C = i_c = 0; V_CB = 8 V; f = 1 MHz
I_C = 40 mA; V_CE = 8 V; f = 1 GHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 40 mA; V_CE = 8 V;
T_amb = 25 °C; f = 900 MHz
Γ_s = Γ_opt; I_C = 10 mA; V_CE = 8 V;
T_amb = 25 °C; f = 2 GHz
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. TYP. MAX. UNIT
−
−
20 V
−
−
15 V
−
−
120 mA
−
−
500 mW
60 120 250
−
0.6 −
pF
−
9
−
GHz
−
14 −
dB
−
7
−
dB
12 13 −
dB
−
1.3 1.8 dB
−
1.9 2.4 dB
−
2.1 −
dB
1999 Aug 23
2