BFQ251 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP video transistor

Philips Semiconductors
PNP video transistor
Product specification
BFQ251
FEATURES
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Buffer/driver in high-resolution
colour graphics monitors.
DESCRIPTION
PNP video transistor in a SOT54
(TO-92) plastic package.
NPN complement: BFQ231.
PINNING
PIN
DESCRIPTION
1 base
2 collector
3 emitter
1
page
2
3
MSB033
Fig.1 Simplified outline
(SOT54; TO-92).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
V_CBO
V_CER
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
open emitter
−
R_BE = 100 Ω
−
−
T_s ≤ 65 °C; note 1
−
I_C = −50 mA; V_CE = −10 V
20
I_C = −50 mA; V_CE = −10 V; T_amb = 25 °C 1
Note
1. T_s is the temperature at the soldering point of the collector pin, 4 mm from the body.
TYP.
−
−
−
−
30
1.3
MAX.
−100
−95
−300
1
−
−
UNIT
V
V
mA
W
GHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_CER
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
R_BE = 100 Ω
open collector
T_s ≤ 65 °C; notes 1 and 2; see Fig.3
MIN.
−
−
−
−
−
−
−65
−
Notes
1. T_s is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm².
MAX.
−100
−65
−95
−3
−300
1
+150
150
UNIT
V
V
V
V
mA
W
°C
°C
1998 Oct 06
2