BFQ245 Datasheet, PDF (2/6 Pages) NXP Semiconductors – PNP video transistor

Philips Semiconductors
PNP video transistor
Product specification
BFQ245
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
PNP silicon transistor encapsulated
in a 3-lead plastic SOT128B package.
PINNING
PIN
DESCRIPTION
1 emitter
2 collector
3 base
handbook, halfpage
1 23
MGA323
Fig.1 Simplified outline SOT128B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
I_C
P_tot
f_T
C_re
T_j
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
CONDITIONS
open emitter
T_mb = 25 °C
I_C = −25 mA; V_CE = −10 V
I_C = 0; V_CB = −10 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CER
V_EBO
I_C
I_C(AV)
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 100 Ω
open collector
see Fig.2
see Fig.2
T_mb = 25 °C; see Fig.3
TYP.
−
−
−
1
1.7
−
MAX.
−100
−100
3.75
−
−
175
UNIT
V
mA
W
GHz
pF
°C
MIN.
−
−
−
−
−
−
−65
−
MAX.
−100
−95
−3
−100
−100
3.75
+175
175
UNIT
V
V
V
mA
mA
W
°C
°C
1996 Sep 04
2