BFQ226 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN video transistor

Philips Semiconductors
NPN video transistor
Product specification
BFQ226
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 4-lead plastic SOT223 package.
PINNING
PIN
DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
handbook, halfpage
4
1
Top view
2
3
MSB002 - 1
Fig.1 Simplified outline SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
I_C
P_tot
f_T
C_re
T_j
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
CONDITIONS
open emitter
up to T_s = 60 °C
I_C = 25 mA; V_CE = 10 V
I_C = 0; V_CB = 10 V
TYP.
−
−
−
1
1.7
−
MAX.
100
100
3
−
−
175
UNIT
V
mA
W
GHz
pF
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CER
V_EBO
I_C
I_C(AV)
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 100 Ω
open collector
see Fig.2
see Fig.2
up to T_s = 60 °C; note 1; see Fig.3
MIN.
−
−
−
−
−
−
−65
−
Note
1. T_s is the temperature at the soldering point of the collector pin.
MAX.
100
95
3
100
100
3
+175
175
UNIT
V
V
V
mA
mA
W
°C
°C
1996 Sep 04
2