BFQ151 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP video transistor

Philips Semiconductors
PNP video transistor
Product specification
BFQ151
FEATURES
• High gain bandwidth
• Good thermal stability
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• Pre-stage driver between video
amplifier and video module.
DESCRIPTION
PNP video transistor in a SOT54
plastic package.
PINNING
PIN
DESCRIPTION
1 base
2 collector
3 emitter
1
page
2
3
MSB033
Fig.1 Simplified outline SOT54.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
I_C
P_tot
f_T
C_re
T_j
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
CONDITIONS
open emitter
T_s ≤ 60 °C
I_C = −70 mA; V_CE = −10 V
I_C = 0; V_CB = −10 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 60 °C; note 1; see Fig.2
Note
1. T_s is the temperature at the soldering point of the collector pin.
TYP.
−
−
−
3.5
1.8
−
MAX.
−20
−100
1.25
−
−
175
UNIT
V
mA
W
GHz
pF
°C
MIN.
−
−
−
−
−
−65
−
MAX.
−20
−15
−3
−100
1.25
+150
175
UNIT
V
V
V
mA
W
°C
°C
1997 Sep 19
2