BFQ149_N_15 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PNP 5 GHz wideband transistor

NXP Semiconductors
PNP 5 GHz wideband transistor
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analysers, etc.,
using SMD technology.
PINNING
PIN
DESCRIPTION
Code: FG
1 emitter
2 collector
3 base
Product specification
BFQ149
321
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
P_tot
h_FE
f_T
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
open base
−
−
−15 V
−
up to T_s = 135 °C (note 1)
−
I_C = −70 mA; V_CE = −10 V; T_j = 25 °C 20
I_C = −75 mA; V_CE = −10 V;
4
f = 500 MHz; T_j = 25 °C
I_C = −50 mA; V_CE = −10 V;
−
f = 500 MHz; T_amb = 25 °C
I_C = −50 mA; V_CE = −10 V;
−
R_s = 60 Ω; f = 500 MHz;
T_amb = 25 °C
−
−100 mA
−
1
W
50 −
5
−
GHz
12 −
dB
3.75 −
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to T_s = 135 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−
−65
−
MAX.
−20
−15
−3
−100
−150
1
150
150
UNIT
V
V
V
mA
mA
W
°C
°C
Rev. 03 - 28 September 2007
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