BFG92A Datasheet, PDF (2/16 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG92A/X
FEATURES
• High power gain
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Marking code: V14.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
T_s ≤ 60 °C
I_C = i_c = 0; V_CB = 10 V; f = 1 MHz
I_C = 15 mA; V_CE = 10 V; f = 500 MHz
I_C = 15 mA; V_CE = 10 V; T_amb = 25 °C;
f = 1 GHz
I_C = 15 mA; V_CE = 10 V; T_amb = 25 °C;
f = 2 GHz
F
noise figure
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 10 V;
T_amb = 25 °C; f = 1 GHz
MIN.
−
−
−
−
−
3.5
−
−
−
TYP.
−
−
−
−
0.35
5
16
11
2
MAX.
20
15
25
400
−
−
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
1998 Sep 23
2