BFG35_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN 4 GHz wideband transistor

NXP Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFG35
DESCRIPTION
PINNING
NPN planar epitaxial transistor
PIN
DESCRIPTION
lfpage
4
mounted in a plastic SOT223
envelope, intended for wideband
1
emitter
amplifier applications. It features high ²
base
output voltage capabilities.
3
emitter
4
collector
1
Top view
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
V_o
collector-emitter voltage
open base
DC collector current
total power dissipation
DC current gain
up to T_s = 135 C (note 1)
I_C = 100 mA; V_CE = 10 V; T_j = 25 C
transition frequency
I_C = 100 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 C
maximum unilateral power gain I_C = 100 mA; V_CE = 10 V;
f = 500 MHz; T_amb = 25 C
I_C = 100 mA; V_CE = 10 V;
f = 800 MHz; T_amb = 25 C
output voltage
I_C = 100 mA; V_CE = 10 V;
d_im = 60 dB; R_L = 75 ;
f_(p+qr) = 793.25 MHz; T_amb = 25 C
MIN.



25




TYP.



70
4
15
11
750
MAX. UNIT
18
V
150 mA
1
W


GHz

dB

dB

mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 135 C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.





65

MAX.
25
18
2
150
1
+150
175
UNIT
V
V
V
mA
W
C
C
1999 Aug 24
2