BFG198 Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
DESCRIPTION
PINNING
NPN planar epitaxial transistor in a
PIN
DESCRIPTION
plastic SOT223 envelope, intended
for wideband amplifier applications.
1
emitter
age
The device features a high gain and
2
base
excellent output voltage capabilities. 3
emitter
4
collector
Product specification
BFG198
4
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
G_UM
V_o
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
output voltage
open emitter
open base
up to T_s = 135 °C (note 1)
I_C = 50 mA; V_CE = 5 V; T_j = 25 °C
I_C = 50 mA; V_CE = 8 V; f = 1 GHz;
T_amb = 25 °C
I_C = 50 mA; V_CE = 8 V; f = 500 MHz;
T_amb = 25 °C
I_C = 50 mA; V_CE = 8 V; f = 800 MHz;
T_amb = 25 °C
d_im = −60 dB; I_C = 70 mA; V_CE = 8 V;
R_L = 75 Ω; T_amb = 25 °C;
f_(p+q−r) = 793.25 MHz
MIN.
−
−
−
−
40
−
TYP.
−
−
−
−
90
8
MAX.
20
10
100
1
−
−
UNIT
V
V
mA
W
GHz
−
18
−
dB
−
15
−
dB
−
700 −
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
CONDITIONS
up to T_s = 135 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
MIN.
−
−
−
−
−
−65
−
MAX.
20
10
2.5
100
1
+150
175
UNIT
V
V
V
mA
W
°C
°C