BF996S Datasheet, PDF (2/5 Pages) NXP Semiconductors – N-channel dual-gate MOS-FET

Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF996S
FEATURES
• Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
• RF applications such as:
– UHF television tuners
– Professional communication equipment.
PINNING
PIN
1
2
3
4
SYMBOL
DESCRIPTION
s, b source
d
drain
g₂
gate 2
g₁
gate 1
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
handbook, halfpage
4
3
d
g2
g1
1
2
s,b
Top view
MAM039
Marking code: MHp.
Fig.1 Simplified outline (SOT143) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
V_DS
I_D
P_tot
T_j
Y_fs
C_ig-1s
C_rs
F
drain-source voltage
−
drain current
−
total power dissipation
up to T_amb = 60 °C
−
junction temperature
−
transfer admittance
f = 1 kHz; I_D = 10 mA; V_DS = 15 V; V_G2−S = 4 V 18
input capacitance at gate 1 f = 1 MHz; I_D = 10 mA; V_DS = 15 V; V_G2−S = 4 V 2.3
feedback capacitance
f = 1 MHz; I_D = 10 mA; V_DS = 15 V; V_G2−S = 4 V 25
noise figure
f = 200 MHz G_S = 2 mS; B_S = B_Sopt;
1
I_D = 10 mA; V_DS = 15 V; V_GS−2 = 4 V
MAX.
20
30
200
150
−
2.6
−
−
UNIT
V
mA
mW
°C
mS
pF
fF
dB
April 1991
2