BCV61 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN general purpose double transistor

Philips Semiconductors
NPN general purpose double transistor
Product specification
BCV61
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V)
• Matched pairs.
APPLICATIONS
• For use in applications where the working point must be
independent of temperature
• Current mirrors.
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV62.
PINNING
PIN
1
2
3
4
DESCRIPTION
collector TR2; base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
handbook, halfpag4e
3
2
1
TR1
TR2
MARKING
TYPE
NUMBER
BCV61
BCV61A
MARKING
CODE
1Mp
1Jp
TYPE
NUMBER
BCV61B
BCV61C
MARKING
CODE
1Kp
1Lp
1
2
3
4
Top view
MAM293
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBS
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage TR1
collector-emitter voltage TR1
emitter-base voltage
collector current (DC)
peak collector current
peak base current TR1
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
V_CE = 0
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
30
30
6
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 08
2