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BCP69 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP medium power transistor | |||
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Philips Semiconductors
PNP medium power transistor
Product speciï¬cation
BCP69
FEATURES
⢠High current (max. 1 A)
⢠Low voltage (max. 20 V).
APPLICATIONS
⢠General purpose switching and amplification
⢠Power applications such as audio output stages.
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complement: BCP68.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ⤠25 °C; note 1
MIN.
â
â
â
â
â
â
â
â65
â
â65
MAX.
â32
â20
â5
â1
â2
â200
1.35
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see âThermal considerations for SOT223 in the General Part of associated
Handbookâ.
1999 Apr 08
2
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