BCP54 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN medium power transistors

Philips Semiconductors
NPN medium power transistors
Product specification
BCP54; BCP55; BCP56
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Switching.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
DESCRIPTION
handbook, halfpage
4
NPN medium power transistor in a SOT223 plastic
package. PNP complements: BCP51, BCP52 and BCP53.
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
collector-base voltage
BCP54
BCP55
BCP56
V_CEO
collector-emitter voltage
BCP54
BCP55
BCP56
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN. MAX. UNIT
−
45
V
−
60
V
−
100
V
−
45
V
−
60
V
−
80
V
−
5
V
−
1
A
−
1.5
A
−
0.2
A
−
1.33 W
−65
+150 °C
−
150
°C
−65
+150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2