BCP51 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP medium power transistors

Philips Semiconductors
PNP medium power transistors
Product specification
BCP51; BCP52; BCP53
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Medium power (max. 1.3 W).
APPLICATIONS
• Audio, telephony and automotive applications
• Thick and thin-film circuits.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BCP51
BCP52
BCP53
collector-emitter voltage
BCP51
BCP52
BCP53
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
MIN.
MAX.
UNIT
−
−45
V
−
−60
V
−
−100
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−1.5
A
−
−0.2
A
−
1.3
W
−65
+150
°C
−
150
°C
−65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm².
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2