BC516 Datasheet, PDF (2/8 Pages) NXP Semiconductors – PNP Darlington transistor

Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• Very high DC current gain (min. 30000).
APPLICATIONS
• Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BC517.
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
handbook, halfpage
1
2
3
2
3
TR1
TR2
1
MAM303
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
CONDITIONS
collector-base voltage (open emitter) open emitter
collector-emitter voltage
emitter-base voltage
V_BE = 0
open collector
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
T_amb ≤ 25 °C; note 1
junction temperature
operating ambient temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−40
−30
−10
−500
−800
−100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 23
2