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BB911 Datasheet, PDF (2/4 Pages) NXP Semiconductors – VHF variable capacitance diode | |||
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Philips Semiconductors
VHF variable capacitance diode
Product speciï¬cation
BB911/A
FEATURES
⢠High linearity
⢠Matched to 2.5%
⢠Hermetically sealed leaded glass
SOD68 (DO-34) package
⢠C28: 2.7 pF; ratio: 25.
APPLICATIONS
⢠Electronic tuning in VHF television
tuners, band A up to 160 MHz
⢠VCO.
DESCRIPTION
The BB911/A is a variable
capacitance diode, fabricated in
planar technology, and encapsulated
in the hermetically sealed leaded
glass SOD68 (DO-34) package.
handbook, halfpagke
a
Cathode side indicated by a red band on a black body.
Additional white band.
MAM234
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN. MAX. UNIT
VR
continuous reverse voltage
â
30
V
IF
continuous forward current
â
20
mA
Tstg
storage temperature
â55
+150 °C
Tj
operating junction temperature â55
+100 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
C-C----d-d---((--02--.-85---VV---))-
â--C--C---d--d-
capacitance ratio
capacitance matching
CONDITIONS
VR = 30 V; see Fig.3
VR = 30 V; Tj = 85 °C; see Fig.3
f = 100 MHz; note 1
VR = 0.5 V; f = 1 MHz; see Figs 2 and 4
VR = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
VR = 0.5 to 28 V
Note
1. VR is the value at which Cd = 40 pF.
MIN. TYP. MAX. UNIT
â
â
10 nA
â
â
â
â
60 â
200 nA
2
â¦
75 pF
2.4 â
23.3 â
2.9 pF
28.4
â
â
2.5 %
1996 May 03
2
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