BB910 Datasheet, PDF (2/4 Pages) NXP Semiconductors – VHF variable capacitance diode

Philips Semiconductors
VHF variable capacitance diode
Product specification
BB910
FEATURES
• Excellent linearity
• Matched to 2.5%
• Hermetically sealed leaded glass
SOD68 (DO-34) package
• C28: 2.5; ratio: 16
• Low series resistance.
APPLICATIONS
• Electronic tuning in VHF television
tuners, band B up to 460 MHz
• VCO.
DESCRIPTION
The BB910 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
hermetically sealed leaded glass
SOD68 (DO-34) package.
handbook, halfpagke
a
MAM234
Cathode side indicated by a red band on a black body.
Additional green band.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature
T_j
operating junction temperature
MIN.
−
−
−55
−55
MAX.
30
20
+150
+100
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
T_j= 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
I_R
reverse current
r_s
diode series resistance
C_d
diode capacitance
C-C----_{d-d---((--02--.-85---VV---))-}
∆_{--C--C---d--d-}
capacitance ratio
capacitance matching
CONDITIONS
V_R = 28 V; see Fig.3
V_R = 28 V; T_j = 85 °C; see Fig.3
f = 100 MHz; note 1
V_R = 0.5 V; f = 1 MHz; see Figs 2 and 4
V_R = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
V_R = 0.5 to 28 V
Note
1. V_R is the value at which C_d = 40 pF.
MIN. TYP. MAX. UNIT
−
−
10 nA
−
−
−
−
38 −
200 nA
1
Ω
−
pF
2.3 −
14 −
2.7 pF
−
−
−
2.5 %
1996 May 03
2