BB215 Datasheet, PDF (2/4 Pages) NXP Semiconductors – UHF variable capacitance diode

Philips Semiconductors
UHF variable capacitance diode
Product specification
BB215
FEATURES
• Excellent linearity
• Matched to 3%
• Small hermetically sealed glass
SMD package
• C28: 2 pF; ratio: 8.3
• Low series resistance.
handbook, 4 columns
k
Cathode side indicated by a white band.
Second green band for type identification.
a
MAM186 - 1
APPLICATIONS
• Electronic tuning in UHF television
tuners
• VCO.
DESCRIPTION
The BB215 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD80 glass SMD package.
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature
T_j
operating junction temperature
MIN.
−
−
−55
−55
MAX.
30
20
+150
+100
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
I_R
reverse current
r_s
diode series resistance
C_d
diode capacitance
C--C---_d^-d---₍^-(-₂^-1-₈^--V-_V^--)-₎^-
∆_{--C--C---d--d-}
capacitance ratio
capacitance matching
CONDITIONS
V_R = 28 V; see Fig.3
V_R = 28 V; T_j = 85 °C; see Fig.3
f = 470 MHz; note 1
V_R = 1 V; f = 1 MHz; see Figs 2 and 4
V_R = 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
V_R = 0.5 to 28 V
Note
1. V_R is the value at which C_d = 9 pF.
MIN. TYP. MAX. UNIT
−
−
10 nA
−
−
200 nA
−
−
0.75 Ω
−
16.5 18 pF
1.8 −
2.2 pF
7.6 8.3 −
−
−
3
%
1996 May 03
2