BB207 Datasheet, PDF (2/7 Pages) NXP Semiconductors – FM variable capacitance double diode

Philips Semiconductors
BB207
FM variable capacitance double diode
4. Marking
Table 3: Marking
Type number
BB207
[1] * = p: made in Hong Kong.
* = w: made in China.
5. Limiting values
Marking code ^[1]
*13
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
V_R
continuous reverse voltage
-
I_F
continuous forward current
-
T_stg
storage temperature
−55
T_j
junction temperature
−55
Max
Unit
15
V
20
mA
+150
°C
+125
°C
6. Characteristics
Table 5: Electrical Characteristics
T_j = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Per diode
I_R
r_s
C_d
C^--C---_d^--d-₍^-(-₇^-1-_.^-₅^-V--_V^--)-₎
reverse current
diode series resistance
diode capacitance
capacitance ratio
V_R = 15 V; see Figure 2
V_R = 15 V; T_j = 85 °C; see Figure 2
f = 100 MHz; V_R = 3 V
V_R = 1 V; f = 1 MHz; see Figure 1
V_R = 3 V; f = 1 MHz; see Figure 1
V_R = 7.5 V; f = 1 MHz; see Figure 1
V_R = 8 V; f = 1 MHz; see Figure 1
f = 1 MHz
Min Typ Max Unit
−
−
10
nA
−
−
200 nA
−
0.2
0.4
Ω
76
81
86
pF
−
50.5 −
pF
25.5 27.6 29.7 pF
−
26.3 −
pF
2.6
−
3.3
9397 750 13003
Product data sheet
Rev. 02 — 27 April 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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