BB200 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-voltage variable capacitance double diode

Philips Semiconductors
Low-voltage variable capacitance double diode
Product specification
BB200
FEATURES
• Very steep C/V curve
• C1: 70 pF; C4.5: 13.4 pF
• C1 to C5 ratio: min. 5
• Low series resistance
• Small plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a₁)
anode (a₂)
common cathode
APPLICATIONS
• Electronic tuning in FM-radio
• Voltage Controlled Oscillators (VCO).
handbook, halfpage
3
3
DESCRIPTION
The BB200 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
1
2
1
2
MAM169
MARKING
TYPE NUMBER
BB200
MARKING CODE
SBp
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
Per diode
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature range
T_j
operating junction temperature
MIN.
MAX.
UNIT
−
18
V
−
50
mA
−55
+150
°C
−55
+85
°C
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
I_R
r_s
C_d
reverse current
diode series resistance
diode capacitance
CC-----_{dd---((--15---VV---))}
capacitance ratio
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V_R = 10 V
−
−
50
nA
f = 100 MHz; V_R = 1.5 V −
0.43
0.6
Ω
V_R = 1 V; f = 1 MHz
65.8
70
74.2
pF
V_R = 4.5 V; f = 1 MHz
12
13.4
14.8
pF
f = 1 MHz
5
−
−
2001 Oct 12
2