BB175_15 Datasheet, PDF (2/8 Pages) NXP Semiconductors – VHF variable capacitance diode

NXP Semiconductors
BB175
VHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB175
Marking code
CH
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_R
reverse voltage
peak value in series with a 10 k resistor
I_F
forward current
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
- 32 V
- 35 V
- 20 mA
55 +150 C
55 +125 C
6. Characteristics
Table 5. Characteristics
T_j = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
I_R
r_s
C_d
C_d(1V)/C_d(2V)
reverse current
diode series resistance
diode capacitance
V_R = 30 V
V_R = 30 V; T_j = 85 C
f = 100 MHz; C_d = 30 pF
f = 1 MHz
diode capacitance ratio
(1 V to 2 V)
V_R = 1 V
V_R = 28 V
f = 1 MHz
C_d(1V)/C_d(28V) diode capacitance ratio f = 1 MHz
(1 V to 28 V)
C_d(25V)/C_d(28V) diode capacitance ratio f = 1 MHz
(25 V to 28 V)
Min
[1] _-
[1] _-
-
[2]
52
2.48
-
20.6
-
Typ Max
- 10
- 200
1.0 1.2
- 62
2.7 2.89
1.31 -
22 -
1.05 -
Unit
nA
nA

pF
pF
[1] See Figure 2.
[2] See Figure 1 and Figure 3.
BB175
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 March 2013
© NXP B.V. 2013. All rights reserved.
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