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BB173_15 Datasheet, PDF (2/8 Pages) NXP Semiconductors – VHF variable capacitance diode
NXP Semiconductors
BB173
VHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB173
Marking code
CE
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VR
reverse voltage
peak value in series with a 10 k resistor
IF
forward current
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
- 32 V
- 35 V
- 20 mA
55 +150 C
55 +125 C
6. Characteristics
Table 5. Characteristics
Tj = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
IR
rs
Cd
Cd(1V)/Cd(2V)
reverse current
diode series resistance
diode capacitance
VR = 30 V
VR = 30 V; Tj = 85 C
f = 100 MHz; Cd = 30 pF
f = 1 MHz
diode capacitance ratio
(1 V to 2 V)
VR = 1 V
VR = 28 V
f = 1 MHz
Cd(1V)/Cd(28V) diode capacitance ratio f = 1 MHz
(1 V to 28 V)
Cd(25V)/Cd(28V) diode capacitance ratio f = 1 MHz
(25 V to 28 V)
Min
[1] -
[1] -
-
[2]
Typ Max Unit
- 10 nA
- 200 nA
0.65 0.8 
34.65 -
2.361 2.6
-
1.3
42.35 pF
2.754 pF
-
13.5 15 -
-
1.08 -
[1] See Figure 2.
[2] See Figure 1 and Figure 3.
BB173
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 March 2013
© NXP B.V. 2013. All rights reserved.
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