BB170_15 Datasheet, PDF (2/8 Pages) NXP Semiconductors – VHF variable capacitance diode

NXP Semiconductors
BB170
VHF variable capacitance diode
4. Marking
Table 3. Marking
Type number
BB170
Marking code
4H
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
reverse voltage
-
I_F
forward current
-
T_stg
storage temperature
55
T_j
junction temperature
55
6. Characteristics
Max Unit
30
V
20
mA
+150 C
+125 C
Table 5. Characteristics
T_j = 25 C unless otherwise specified.
Symbol
Parameter
I_R
reverse current
r_s
diode series resistance
C_d
diode capacitance
C_d(1V)/C_d(28V) diode capacitance ratio
(1 V to 28 V)
Conditions
V_R = 30 V
V_R = 30 V; T_j = 85 C
f = 100 MHz; C_d = 12 pF
f = 1 MHz
V_R = 1 V
V_R = 28 V
f = 1 MHz
[1] See Figure 2.
[2] See Figure 1 and Figure 3.
Min
[1] _-
[1] _-
-
[2]
Typ Max Unit
- 10 nA
- 200 nA
- 0.9 
36.8 -
2.4 2.6
14.5 15
41.8 pF
2.75 pF
-
BB170
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 March 2013
© NXP B.V. 2013. All rights reserved.
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