BB155 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Low-voltage variable capacitance diode

Philips Semiconductors
Low-voltage variable capacitance diode
Product specification
BB155
FEATURES
• Very low capacitance spread
• Excellent linearity
• Low series resistance
• Very small plastic SMD package.
APPLICATIONS
• Voltage controlled oscillators
(VCO), especially in mobile
communication equipment.
handbook, 4 columns
k
a
MAM130
Marking code: PE.
Cathode side indicated by a bar.
Fig.1 Simplified outline (SOD323) and symbol.
DESCRIPTION
The BB155 is a variable capacitance
diode, fabricated in planar
technology, and encapsulated in the
SOD323 very small plastic SMD
package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature
T_j
operating junction temperature
MIN.
−
−
−55
−55
MAX. UNIT
10
V
20
mA
+150 °C
+125 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
I_R
reverse current
r_s
diode series resistance
C_d
diode capacitance
CONDITIONS
V_R = 10 V; see Fig.3
V_R = 10 V; T_j = 85 °C; see Fig.3
f = 100 MHz; note 1
V_R = 0.34 V; f = 1 MHz; see Figs 2 and 4
V_R = 2.82 V; f = 1 MHz; see Figs 2 and 4
Note
1. V_R is the value at which C_d = 30 pF.
MIN.
−
−
−
45.2
24.55
TYP.
−
−
0.35
−
−
MAX.
10
200
0.6
49.8
26.7
UNIT
nA
nA
Ω
pF
pF
1996 Sep 20
2