BB154 Datasheet, PDF (2/8 Pages) NXP Semiconductors – UHF variable capacitance diode

Philips Semiconductors
UHF variable capacitance diode
Preliminary specification
BB154
FEATURES
• Excellent linearity
• Excellent matching to 2% DMA
• Very small plastic SMD package
• C28: 2.0 pF; ratio: 9.7
• Very low series resistance.
APPLICATIONS
• Electronic tuning in UHF television tuners
• Voltage controlled oscillators (VCO).
DESCRIPTION
The BB154 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small SMD package.
The excellent matching performance is achieved by gliding
matching and a direct matching assembly procedure.
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
4 columns
1k
2a
Marking code: PM.
Cathode indicated by a marking bar.
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_R
continuous reverse voltage
V_RM
peak reverse voltage
in series with a 10 kΩ resistor
I_F
continuous forward current
T_stg
storage temperature
T_j
operating junction temperature
MIN.
−
−
−
−55
−55
MAX.
30
35
20
+150
+150
UNIT
V
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_R
r_s
C_d
C--C---_d^-d---₍^-(-₂^-1-₈^--V-_V^--)-₎^-
reverse current
V_R = 30 V; see Fig.3
−
V_R = 30 V; T_j = 85 °C; see Fig.3
−
diode series resistance f = 470 MHz; V_R is the value at which C_d = 9 pF −
diode capacitance
V_R = 1 V; f = 1 MHz; see Figs 2 and 4
18.5
V_R = 28 V; f = 1 MHz; see Figs 2 and 4
1.9
capacitance ratio
f = 1 MHz
9.
−
−
0.60
−
−
9.7
10 nA
200 nA
0.75 Ω
21.25 pF
2.2 pF
11
∆_{--C--C---d--d-}
capacitance matching V_R = 1 to 28 V; in a sequence of 15 diodes
(gliding)
−
−
2
1999 May 12
2