BB151 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-voltage variable capacitance diode

Philips Semiconductors
Low-voltage variable capacitance diode
Preliminary specification
BB151
FEATURES
• Very low capacitance spread
• Excellent linearity
• Very small plastic SMD package
• C3: 10.6 pF; ratio: 1.53
• Very low series resistance.
APPLICATIONS
• Voltage controlled oscillators (VCO).
DESCRIPTION
The BB151 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323 very
small plastic SMD package.
PINNING
PIN
1
2
cathode
anode
DESCRIPTION
4 columns
k1
2a
Marking code: PA.
Cathode side indicated by a bar.
MAM130
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_R
continuous reverse voltage
I_F
continuous forward current
T_stg
storage temperature
T_j
operating junction temperature
MIN.
−
−
−55
−55
MAX.
10
20
+150
+150
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_R
reverse current
V_R = 10 V; see Fig.3
−
−
10 nA
V_R = 10 V; T_j = 85 °C; see Fig.3
−
−
200 nA
r_s
diode series resistance f = 470 MHz; V_R is the value at which C_d = 9 pF −
0.4 0.55 Ω
C_d
diode capacitance
f = 1 MHz; see Figs 2 and 4
V_R = 0.5 V
−
19.1 −
pF
V_R = 1 V
15.4 16.2 17 pF
V_R = 2 V
−
12.8 −
pF
V_R = 3 V
9.9 10.6 11.3 pF
V_R = 4 V
−
9
−
pF
CC-----_{dd----((--13--VV----))}
capacitance ratio
f = 1 MHz
1.45 1.53 −
CC-----_{dd----((--14--VV----))}
capacitance ratio
f = 1 MHz
−
1.8 −
1999 May 12
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