BB149_04 Datasheet, PDF (2/7 Pages) NXP Semiconductors – UHF variable capacitance diode

Philips Semiconductors
BB149
UHF variable capacitance diode
4. Marking
Table 3: Marking
Type number
BB149
Marking code
P9
5. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
reverse voltage
-
I_F
forward current
-
T_stg
storage temperature
−55
T_j
junction temperature
−55
6. Characteristics
Max Unit
30
V
20
mA
+150 °C
+125 °C
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_R
reverse current see Figure 2
V_R = 30 V
-
-
10
nA
V_R = 30 V; T_j = 85 °C
-
-
200 nA
r_s
diode series
f = 470 MHz
resistance
[1] _-
-
0.75 Ω
C_d
diode
f = 1 MHz; see Figure 1 and 3
capacitance
V_R = 1 V
18
-
19.5 pF
V_R = 28 V
1.9 2.1 2.25 pF
CC_{-----dd---((--12--8-V--V-)---)} ^{capacitance ratio f = 1 MHz}
8.2 9
10
CC_{-----dd---((--12--98---VV----))} ^{capacitance ratio f = 1 MHz}
1.2 -
-
∆_----C_-----d
C_d
capacitance
matching
V_R = 0.5 V to 28 V; in a
sequence of 10 diodes
(gliding)
-
-
2
%
[1] V_R is the value at which C_d = 9 pF.
9397 750 13825
Product data sheet
Rev. 05 — 4 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 7