BAT254-115 Datasheet, PDF (2/7 Pages) NXP Semiconductors – Schottky barrier diode

NXP Semiconductors
Schottky barrier diode
Product data sheet
BAT254
FEATURES
• Low forward voltage
• Guard ring protected
• Very small ceramic SMD package.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
handbook, 4 columns
a
k
cathode mark
k
a
bottom view
Marking code: L4.
side view
top view
MAM214
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
T_amb
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
t_p ≤ 1 s; δ ≤ 0.5
t_p < 10 ms
MIN.
−
−
−
−
−65
−
−65
MAX.
30
200
300
600
+150
125
+125
UNIT
V
mA
mA
mA
°C
°C
°C
2002 May 28
2