BAS55 Datasheet, PDF (2/7 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAS55
FEATURES
• Small plastic SMD package
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
APPLICATIONS
• High-speed switching in surface
mounted circuits.
DESCRIPTION
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, halfpa2ge
1
2
n.c.
1
3
Marking code: L5p.
3
MAM185
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
see Fig.2; note 1
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
T_amb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
MAX.
60
60
250
600
UNIT
V
V
mA
mA
−
9A
−
3A
−
1.7 A
−
250 mW
−65 +150 °C
−
150 °C
1996 Sep 10
2