BAS45A_15 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
Low-leakage diode
Product data sheet
BAS45A
FEATURES
• Continuous reverse voltage:
max. 125 V
• Repetitive peak forward current:
max. 625 mA
• Low reverse current: max. 1 nA
• Switching time: typ. 1.5 μs.
APPLICATION
• Low leakage current applications.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
handbook, halfp^kage
a
MAM156
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2; note 1
repetitive peak forward current
non-repetitive peak forward current square wave; T_j = 25 °C prior to
surge; see Fig.4
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
t_p = 1 μs
t_p = 1 ms
t_p = 1 s
T_amb = 25 °C
Note
1. Device mounted on a printed-circuit board without metallization pad.
MIN.
−
−
−
−
MAX.
125
125
250
625
UNIT
V
V
mA
mA
−
4A
−
1A
−
0.5 A
−
300 mW
−65 +175 °C
−
175 °C
1996 Mar 13
2