BAS40L Datasheet, PDF (2/8 Pages) NXP Semiconductors – Schottky barrier diode

Philips Semiconductors
Schottky barrier diode
Product specification
BAS40L
FEATURES
• Low diode capacitance
• Low forward voltage
• Guard ring protected
• High breakdown voltage
• Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm² (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection. Encapsulated in a SOD882 leadless
ultra small plastic package.
handbook, halfpage
Bottom view
MDB391
Marking code: S6.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD882) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
V_R
I_F
I_FRM
I_FSM
T_stg
T_j
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t_p ≤ 1s; δ ≤ 0.5
t_p < 10 ms
MIN.
MAX.
UNIT
−
40
V
−
120
mA
−
120
mA
−
200
mA
−65
+150
°C
−
150
°C
2003 May 20
2