BAS116 Datasheet, PDF (2/8 Pages) NXP Semiconductors – Low-leakage diode

Philips Semiconductors
Low-leakage diode
Product specification
BAS116
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
• Low leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching
diode with a low leakage current in a
small SOT23 plastic SMD package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
handbook, 4 columns
2
1
3
Top view
2
1
n.c.
3
MAM106
Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
see Fig.2; note 1
repetitive peak forward current
non-repetitive peak forward current square wave; T_j = 25 °C prior to surge;
see Fig.4
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
t_p = 1 µs
t_p = 1 ms
t_p = 1 s
T_amb = 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
MAX.
85
75
215
500
UNIT
V
V
mA
mA
4
A
1
A
0.5
A
250
mW
+150 °C
150
°C
1999 May 26
2