BAP64-05_15 Datasheet, PDF (2/9 Pages) NXP Semiconductors – Silicon PIN diode

NXP Semiconductors
BAP64-05
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP64-05
Marking
5K*
Description
* = t : made in Malaysia
* = W : made in China
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Values are specified per diode.
Symbol Parameter
Conditions
Min
V_R
reverse voltage
-
I_F
forward current
-
P_tot
total power dissipation
T_sp = 90 C
-
T_stg
storage temperature
65
T_j
junction temperature
65
Max
175
100
250
+150
+150
Unit
V
mA
mW
C
C
6. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
7. Characteristics
Conditions
Typ Unit
220 K/W
Table 6. Characteristics
Values are specified per diode; T_j = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 50 mA
I_R
reverse current
V_R = 175 V
V_R = 20 V
C_d
diode capacitance
see Figure 1; f = 1 MHz;
V_R = 0 V
V_R = 1 V
V_R = 20 V
Min Typ Max Unit
-
0.95 1.1
V
-
-
10
A
-
-
1
A
-
0.52 -
pF
-
0.37 -
pF
-
0.23 0.35 pF
BAP64-05
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 28 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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