74HC583 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 4-bit full adder with fast carry

Philips Semiconductors
4-bit full adder with fast carry
Product specification
74HC/HCT583
FEATURES
• Adds two decimal numbers
• Full internal look-ahead
• Fast ripple carry for economical expansion
• Output capability: standard driver
• I_CC category: MSI
GENERAL DESCRIPTION
The 74HC/HCT583 are high-speed Si-gate CMOS devices
and are pin compatible with low power Schottky TTL
(LSTTL). They are specified in compliance with JECEC
standard no. 7A.
The 74HC/HCT583 are high-speed 4-bit BCD full adders
with internal carry look-ahead. They accept two 4-bit
decimal numbers (A₀ to A₃ and B₀ to B₃) and a carry input
(C_IN).
The “583” generates the decimal sum outputs (∑₀ to ∑₃)
and a carry output (C_n+4) if the sum is greater than 9.
If an addition of two BCD numbers produce a number
greater than 9, a valid BCD number and a carry will result.
For input values larger than 9, the number is converted
from binary to BCD. Binary to BCD conversion occurs by
grounding one set of inputs, A_n or B_n and applying a 4-bit
binary number to the other set of inputs. If the input is
between 0 and 9, a BCD number occurs at the output.
If the binary input falls between 10 and 15, a carry term is
generated. Both the carry term and the sum are the BCD
equivalent of the binary input. Converting binary numbers
greater than 16 may be achieved by cascading “583s”.
See the “283” for the binary version.
QUICK REFERENCE DATA
GND = 0 V; T_amb= 25 °C; t_r = t_f = 6 ns
SYMBOL PARAMETER
CONDITIONS
t_PHL/ t_PLH
C_I
C_PD
propagation delay
C_IN to C_n+4
A_n, B_n to C_n+4
input capacitance
power dissipation capacitance per package
C_L = 15 pF; V_CC = 5 V
notes 1 and 2
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW):
P_D = C_PD × V_CC2 × f_i + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz
f_o = output frequency in MHz
∑ (C_L × V_CC2 × f_o) = sum of outputs
C_L = output load capacitance in pF
V_CC = supply voltage in V
2. For HC the condition is V_I = GND to V_CC
For HCT the condition is V_I = GND to V_CC − 1.5 V
TYPICAL
UNIT
HC HCT
20
23
ns
23
27
ns
3.5
3.5
pF
116
120
pF
1998 Mar 31
2