74HC2G66 Datasheet, PDF (2/20 Pages) NXP Semiconductors – Bilateral switches

Philips Semiconductors
Bilateral switches
Product specification
74HC2G66; 74HCT2G66
FEATURES
• Wide supply voltage range from 2.0 V to 9.0 V
• Very low ON-resistance:
– 41 Ω (typical) at V_CC = 4.5 V
– 30 Ω (typical) at V_CC = 6.0 V
– 21 Ω (typical) at V_CC = 9.0 V.
• High noise immunity
• Low power dissipation
• ± 25 mA switch current
• SOT505-2 package
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 °C to +85 °C and
−40 °C to +125 °C.
DESCRIPTION
The 74HC2G66/74HCT2G66 is a high-speed Si-gate
CMOS device.
The 74HC2G66/74HCT2G66 provides a dual analog
switch. Each switch has two pins (nY and nZ) for input or
output and an active HIGH enable input (pin E). When
pin E is LOW, the belonging analog switch is turned off.
QUICK REFERENCE DATA
GND = 0 V; T_amb = 25 °C; t_r = t_f = 6.0 ns; V_os is the output voltage at pins nY or nZ, whichever is assigned as an output.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC2G HCT2G
t_PZH/t_PZL turn-on time nE to V_os
C_L = 50 pF; R_L = 1 kΩ; V_CC = 4.5 V 12
13
ns
t_PHZ/t_PLZ turn-off time nE to V_os
C_L = 50 pF; R_L = 1 kΩ; V_CC = 4.5 V 12
13
ns
C_I
input capacitance
3.5
3.5
pF
C_PD
power dissipation capacitance per switch notes 1 and 2
9
9
pF
C_S
switch capacitance
8
8
pF
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i + (C_L +C_S) × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
C_S = Switch capacitance in pF;
V_CC = supply voltage in Volts.
2. For 74HC2G66 the condition is V_I = GND to V_CC.
For 74HCT2G66 the condition is V_I = GND to V_CC − 1.5 V.
2004 May 19
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