74HC2G14 Datasheet, PDF (2/17 Pages) NXP Semiconductors – Inverting Schmitt-triggers

Philips Semiconductors
Inverting Schmitt-triggers
Preliminary specification
74HC2G14; 74HCT2G14
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Unlimited input rise and fall times
• Very small 6 pins package.
APPLICATIONS
• Wave and pulse shapers for highly noisy environments
• Astable multivibrators
• Monostable multivibrators
• Output capability: standard.
DESCRIPTION
The 74HC2G/HCT2G14 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G14 provides two inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
QUICK REFERENCE DATA
GND = 0 V; T_amb = 25 °C; t_r = t_f ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
t_PHL/t_PLH
C_I
C_PD
propagation delay nA to nY
input capacitance
power dissipation capacitance
C_L = 50 pF; V_CC = 4.5 V
notes 1 and 2
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz; f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in Volts;
N = total switching outputs;
∑ (C_L × V_CC2 × f_o) = sum of outputs.
2. For HC2G the condition is V_I = GND to V_CC.
For HCT2G the condition is V_I = GND to V_CC − 1.5 V.
TYPICAL
HC2G
16
2
10
HCT2G
21
2
10
UNIT
ns
pF
pF
FUNCTION TABLE
See note 1.
INPUTS
nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUTS
nY
H
L
2003 May 1
2