74HC1G66 Datasheet, PDF (2/20 Pages) NXP Semiconductors – Bilateral switch

Philips Semiconductors
Bilateral switch
Product specification
74HC1G66; 74HCT1G66
FEATURES
• Wide operating voltage range from 2.0 to 9.0 V
• Very low ON-resistance:
– 45 Ω (typical) at V_CC = 4.5 V
– 30 Ω (typical) at V_CC = 6.0 V
– 25 Ω (typical) at V_CC = 9.0 V.
• High noise immunity
• Low power dissipation
• Very small 5 pins package
• Output capability: non standard.
DESCRIPTION
The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G66 provides an analog switch. The
switch has two input/output pins (Y and Z) and an active
HIGH enable input pin (E). When pin E is LOW, the analog
switch is turned off.
The non standard output currents are equal compared to
the 74HC/HCT4066.
QUICK REFERENCE DATA
GND = 0 V; T_amb = 25 °C; t_r = t_f = 6.0 ns.
SYMBOL
PARAMETER
t_PZH/t_PZL
t_PHZ/t_PLZ
C_I
C_PD
C_S
turn-on time E to V_os
turn-off time E to V_os
input capacitance
power dissipation capacitance
maximum switch capacitance
CONDITIONS
TYPICAL
UNIT
HC1G HCT1G
C_L = 15 pF; R_L = 1 kΩ; V_CC = 5 V 11
12
ns
C_L = 15 pF; R_L = 1 kΩ; V_CC = 5 V 11
12
ns
1.5
1.5
pF
notes 1 and 2
9
9
pF
8
8
pF
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i + ∑ ((C_L +C_S)× V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
C_S = maximum switch capacitance in pF;
V_CC = supply voltage in Volts;
∑ ((C_L +C_S)× V_CC2 × f_o) = sum of outputs.
2. For HC1G the condition is V_I = GND to V_CC.
For HCT1G the condition is V_I = GND to V_CC − 1.5 V.
FUNCTION TABLE
See note 1.
INPUT E
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SWITCH
OFF
ON
2002 May 15
2