74HC1G04 Datasheet, PDF (2/16 Pages) NXP Semiconductors – Inverter

Philips Semiconductors
Inverter
Product specification
74HC1G04; 74HCT1G04
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G04 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G04 provides the inverting buffer. The
standard output currents are half the values compared to
the 74HC/HCT04.
QUICK REFERENCE DATA
GND = 0 V; T_amb = 25 °C; t_r = t_f ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
t_PHL/t_PLH
C_I
C_PD
propagation delay A to Y
input capacitance
power dissipation capacitance
C_L = 15 pF; V_CC = 5 V
notes 1 and 2
Notes
1. C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i + ∑ (C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in Volts;
∑ (C_L × V_CC2 × f_o) = sum of outputs.
2. For HC1G the condition is V_I = GND to V_CC.
For HCT1G the condition is V_I = GND to V_CC − 1.5 V.
TYPICAL
HC1G
7
1.5
16
HCT1G
8
1.5
18
UNIT
ns
pF
pF
FUNCTION TABLE
See note 1.
INPUT
A
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
Y
H
L
2002 May 17
2